The IDH10G65C5XKSA2 is a 650 V, 10 A silicon carbide Schottky diode from Infineon's CoolSiC™+ generation. Its defining characteristic is a reverse recovery time of 0 ns — the majority-carrier Schottky structure simply has no stored charge to sweep out, so the recovery event is purely capacitive and current-direction-independent. This eliminates the turn-off loss spike and the ringing that forces snubbers in silicon ultrafast diodes. In a hard-switched PFC boost stage at 100 kHz, the diode's switching loss contribution is effectively zero — the thermal budget is dominated by the 1.7 V forward drop at 10 A.
Thermal headroom for compact builds
Junction temperature range extends to 175°C, which is the practical ceiling for most power-converter designs. The 300 pF capacitance at 1 V reverse bias is low enough that the capacitive switching loss at 650 V bus and 100 kHz stays under 2 W — manageable in a TO-220 with a modest heatsink. The through-hole TO-220-2 package (PG-TO220-2-1) has a standard tab for bolt-on or clip heatsinking. The single-screw mounting hole and the flat backside mean the thermal interface to the heatsink is consistent — no paste gap sensitivity like you get with a TO-247 tab.