Why zero recovery time matters in hard-switched stages
The Infineon IDH09G65C5XKSA2 is a 650 V, 9 A silicon carbide Schottky diode from the CoolSiC™+ generation. Its headline spec is a reverse recovery time (trr) of 0 ns — meaning no stored charge to sweep out when the diode turns off. In a hard-switched PFC or inverter leg, that eliminates the reverse-recovery current spike that costs efficiency and stresses the companion MOSFET or IGBT.
650 V blocking, 9 A continuous — the power envelope
Rated for 650 V DC reverse voltage and 9 A average rectified current. Forward voltage drop is 1.7 V maximum at the full 9 A rating. Reverse leakage is 160 µA at 650 V and 25 °C junction. Like all SiC Schottkys, leakage climbs with temperature, so the thermal design at 175 °C junction limit needs to account for the increased off-state loss — the datasheet's typical curve is the reference, not the 25 °C number.
175 °C junction — where it goes and what it needs
The 175 °C ceiling is higher than most standard Si fast-recovery diodes, making this part suitable for tightly packed power stages where the heatsink is small or the ambient is high.
TO-220-2 — rework-friendly, heatsink-ready
Housed in a standard TO-220-2 through-hole package (Infineon's PG-TO220-2-1 variant). Two leads, tab as the cathode — the same footprint as countless Si ultrafast diodes, so no board layout change if you are swapping a Si FRD for this SiC part. The through-hole tab takes a screw-down or clip-on heatsink easily, and the package reworks cleanly with a soldering iron or hot air — no risk of lifting a pad.
For a BOM line, that means no last-time-buy scramble and no forced requalification in the near term.