1200 V SiC Schottky — zero-recovery switching
The Infineon IDH08G120C5XKSA1 is a CoolSiC+ silicon-carbide Schottky diode rated for 1200 V DC reverse and 8 A average rectified current, in a through-hole TO-220-2 package. Its defining characteristic is a reverse recovery time of 0 ns — there is no stored charge to sweep out, so the diode turns off the instant the current crosses zero.
What zero trr buys the power stage
In a hard-switched PFC or DC-DC converter, a silicon fast-recovery diode's reverse recovery current adds a loss term that scales with switching frequency and temperature. The IDH08G120C5XKSA1 eliminates that term entirely — the recovery is purely capacitive, so switching losses are limited to the device's output capacitance (365 pF at 1 V). This makes it a direct fit for continuous-conduction-mode boost stages where the diode sees hard commutation at every switching cycle. The 1.95 V forward drop at 8 A and 25°C is higher than a comparable silicon hyperfast diode, but the total loss at high frequency is lower because the switching component is near zero. The 40 µA leakage at 1200 V is typical for a 1200 V SiC Schottky and rises with junction temperature — the 175°C maximum junction rating gives the thermal budget to run the die hot without derating the blocking voltage.
Package and mounting — TO-220-2 through-hole
The PG-TO220-2-1 package is a standard two-lead TO-220 with the tab as the cathode. The through-hole mounting suits point-to-point wiring, heatsink attachment with a screw or clip, and hand-assembly rework. The junction-to-case thermal resistance is set by the die attach and the copper tab area — a greased interface to a heatsink is the normal mounting method for continuous 8 A operation at high ambient.