Zero-switching-loss rectifier for hard-switched power stages
The IDH06SG60CXKSA2 is a 600 V, 6 A silicon carbide Schottky diode from Infineon's CoolSiC™+ series.
What zero trr means for the switching loop
Zero reverse recovery time means the diode transitions from forward conduction to blocking with no stored charge to sweep out — the current waveform shows no reverse-recovery spike. This eliminates the turn-on loss contribution from the diode in the complementary switch, reduces EMI at the switching edge, and removes the need for snubber networks that Si fast-recovery diodes often require. The 130 pF junction capacitance at 1 V reverse bias is the only charge that must be delivered per switching cycle — at 100 kHz switching frequency, the capacitive switching loss is roughly 0.5 W, negligible compared to the several watts a Si diode would dissipate in recovery alone.
Forward drop and leakage — thermal design anchors
Maximum forward voltage is 2.3 V at 6 A and 25°C junction. This is higher than a comparable Si Schottky's Vf, but the zero-recovery benefit offsets the conduction loss in hard-switched topologies above 50 kHz. Reverse leakage is 50 µA at 600 V rated reverse voltage — a figure that rises with temperature, so the thermal design should budget for increased leakage at 175°C junction.
Package and mounting — through-hole TO-220-2
Housed in a standard TO-220-2 through-hole package (PG-TO220-2-1), the diode mounts directly to a heatsink via the metal tab. The two-lead format — anode and cathode — simplifies layout in point-of-load rectifier positions. Through-hole mounting suits designs where vibration resistance or manual rework is a priority over board density.
Lifecycle and compliance
ROHS3 compliant, so no exemption expiry concern for EU-market builds. No official second source or pin-compatible alternate is documented in the available records — the BOM position depends on Infineon's supply chain.