SiC Schottky — zero recovery, no penalty
The Infineon IDH06G65C6XKSA1 is a 650 V, 16 A silicon carbide Schottky diode in a TO-220-2 through-hole package. Its zero reverse recovery time (0 ns trr) eliminates the switching loss and ringing that plague silicon ultrafast diodes in hard-switched PFC, boost, and inverter stages. Rated for junction temperatures from -55 to 175 °C, it handles the thermal stress of industrial motor drives, solar inverters, and high-density power supplies without derating.
What the ratings mean for the BOM
650 V reverse voltage. 16 A average rating. Forward voltage of 1.35 V at 6 A. 302 pF capacitance at 1 V, 1 MHz. 20 µA leakage at 420 V.
Lifecycle and compliance — active, no LTB pressure
No last-time-buy, no end-of-life notice on the horizon. ROHS3 compliant, so it passes the environmental requirements for EU and North American markets. For new designs, this is a straightforward BOM line — no need to stockpile or qualify a second source immediately.