SiC Schottky — zero recovery, no penalty
Its zero reverse recovery time (0 ns trr) eliminates the switching loss and ringing that plague silicon ultrafast diodes in hard-switched PFC, boost, and inverter stages. Rated for junction temperatures from -55 to 175 °C, it handles the thermal stress of industrial motor drives, solar inverters, and high-density power supplies without derating.
650 V reverse voltage. 16 A average rating. Forward voltage of 1.35 V at 6 A. 302 pF capacitance at 1 V, 1 MHz. 20 µA leakage at 420 V.
No last-time-buy, no end-of-life notice on the horizon.