Infineon Technologies · CoolSiC™+ Series
Infineon CoolSiC+ SiC Schottky diode, IDH06G65C5XKSA2, 650 V reverse voltage, 6 A average rectified current, 0 ns reverse recovery time, 1.7 V forward voltage at 6 A, PG-TO220-2-1 through-hole package, -55 to 175 °C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolSiC™+ |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 6 A |
| Current - reverse leakage @ vr | 110 µA @ 650 V |
| Current - average rectified | 6A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | TO-220-2 |
| Capacitance @ vr, | 190pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |
The -55 to 175 °C operating range covers automotive under-hood and industrial motor-drive environments without derating the voltage or current ceiling.
