Zero-recovery SiC Schottky for hard-switched power stages
The Infineon IDH06G65C5XKSA2 is a 650 V, 6 A silicon carbide Schottky diode from the CoolSiC+ series. Its defining characteristic is a reverse recovery time of 0 ns — no stored charge to sweep out, so switching losses in the diode itself are effectively eliminated. That makes it a direct fit for continuous-conduction-mode PFC stages, LLC converters, and any hard-switched topology where a silicon ultrafast diode would leave a recovery tail.
Conduction loss and thermal budget at 6 A
Forward voltage is specified at 1.7 V maximum at 6 A and 25 °C junction. The -55 to 175 °C operating range covers automotive under-hood and industrial motor-drive environments without derating the voltage or current ceiling.
