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Infineon Technologies IDH03SG60C
Infineon Technologies

IDH03SG60C SiC Schottky Diode, 600 V 3 A, TO-220-2, Zero trr

MPNIDH03SG60C
End of Life

Infineon CoolSiC™+ IDH03SG60C, Silicon Carbide Schottky Diode, 600 V DC Reverse Voltage (Max), 3 A Average Rectified Current (Io), 0 ns Reverse Recovery Time (trr), Through Hole, TO-220-2, PG-TO220-2-2, -55°C ~ 175°C Junction.

$0.96Ref. price · indicative, final on quote
IDH03SG60C datasheet
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IDH03SG60C Technical Specifications
ParameterValue
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
Mounting typeThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.3 V @ 3 A
Current - reverse leakage @ vr15 µA @ 600 V
Current - average rectified3A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageBulk
CaseTO-220-2
Capacitance @ vr, f60pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

What this SiC Schottky actually does

The Infineon IDH03SG60C is a 600 V, 3 A silicon carbide Schottky diode from the CoolSiC™+ series. Its defining characteristic is a reverse recovery time (trr) of 0 ns — meaning there is no stored charge to sweep out when the diode switches from forward conduction to reverse blocking. That eliminates the switching losses and ringing you get with a fast-recovery silicon diode, which makes this part a direct fit for power factor correction (PFC) stages, high-frequency switching power supplies, and flyback or boost converters where efficiency and thermal management are tight.

Zero trr — what it means for the switching loop

The IDH03SG60C's trr is 0 ns.

Package and mounting

Through-hole TO-220-2 (Infineon designates it PG-TO220-2-2). Two leads — anode and cathode — plus the metal tab is the cathode. The junction is rated for -55 °C to 175 °C.

Lifecycle and sourcing

Infineon lists the IDH03SG60C as Active.

Frequently asked questions

Can IDH03SG60C be used for power factor correction?

Yes. The 600 V blocking voltage and 3 A average current cover the boost diode in a 1–2 kW PFC stage. The 0 ns trr eliminates the reverse-recovery losses that plague silicon ultrafast diodes in continuous-conduction-mode PFC, so efficiency stays high and the MOSFET runs cooler.

Is IDH03SG60C suitable for high frequency switching?

Yes. The zero reverse recovery time means switching losses do not increase with frequency the way they do with silicon diodes. This part is commonly used in 100 kHz+ converters where a silicon diode would overheat or require aggressive snubbing.

What is the closest pin-compatible alternative to IDH03SG60C?

Within Infineon's own CoolSiC™+ family, the IDH03G60C is the earlier generation — same 600 V / 3 A rating, same TO-220-2 footprint. The 'S' in IDH03SG60C denotes the Gen2 (CoolSiC™+) die with improved forward voltage and capacitance characteristics. Electrically they are interchangeable in most designs; the Gen2 part runs slightly cooler at the same current.