IDH03SG60C

Infineon Technologies · CoolSiC™+ Series

Infineon CoolSiC™+ IDH03SG60C, Silicon Carbide Schottky Diode, 600 V DC Reverse Voltage (Max), 3 A Average Rectified Current (Io), 0 ns Reverse Recovery Time (trr), Through Hole, TO-220-2, PG-TO220-2-2, -55°C ~ 175°C Junction.

Infineon Technologies IDH03SG60C
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[IN STOCK] In Stock: 4 pcs
$6.08/ pc

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Technical specifications

IDH03SG60C specifications
Parameter / AttributeSpecification / Value
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.3 V @ 3 A
Current - reverse leakage @ vr15 µA @ 600 V
Current - average rectified3A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageBulk
CaseTO-220-2
Capacitance @ vr,60pF @ 1V, 1MHz
Reverse recovery time0 ns

Technical details

What this SiC Schottky actually does

That eliminates the switching losses and ringing you get with a fast-recovery silicon diode, which makes this part a direct fit for power factor correction (PFC) stages, high-frequency switching power supplies, and flyback or boost converters where efficiency and thermal management are tight.

The IDH03SG60C's trr is 0 ns.

Through-hole TO-220-2 (Infineon designates it PG-TO220-2-2). Two leads — anode and cathode — plus the metal tab is the cathode.

Infineon lists the IDH03SG60C as Active.

IDH03SG60C
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