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Infineon Technologies IDH02G65C5XKSA2
Infineon Technologies

Infineon IDH02G65C5XKSA2 SiC Schottky Diode

MPNIDH02G65C5XKSA2
End of Life

Infineon CoolSiC™+ IDH02G65C5XKSA2, Silicon Carbide Schottky Diode, 650 V Vr, 2 A Io, 0 ns trr, -55 to 175 °C junction temp, PG-TO220-2 through-hole package.

$1.87Ref. price · indicative, final on quote
IDH02G65C5XKSA2 datasheet
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDH02G65C5XKSA2 Technical Specifications
ParameterValue
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
Mounting typeThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 2 A
Current - average rectified2A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr, f70pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

What this SiC Schottky brings to the power stage

The Infineon IDH02G65C5XKSA2 is a 650 V, 2 A silicon carbide Schottky diode from the CoolSiC™+ series, housed in a PG-TO220-2 through-hole package. Its defining characteristic is zero reverse-recovery time (0 ns trr), which means no recovery charge tail to manage — the diode switches off the instant current crosses zero. That eliminates the switching loss and EMI spike that a silicon ultrafast diode would leave in a hard-switched PFC boost or LLC resonant stage. Junction temperature range of -55 to 175 °C covers industrial and automotive hot-spot environments without derating the 2 A average current. The 1.7 V forward drop at 2 A is typical for a 650 V SiC Schottky at this current class; conduction loss stays predictable across the full temperature range.

Zero-recovery switching — what it means for the BOM

The 0 ns trr eliminates the recovery tail that dominates switching loss in a silicon ultrafast diode.

Lifecycle and sourcing posture

The IDH02G65C5XKSA2 carries an Active product status. Infineon continues to manufacture the CoolSiC™+ generation; no PCN or last-time-buy has been issued for this order code. ROHS3 compliance is confirmed.

Frequently asked questions

What is the difference between IDH02G65C5XKSA2 and IDH02G65C5?

The IDH02G65C5XKSA2 is the PG-TO220-2 through-hole variant of the same CoolSiC™+ die. The IDH02G65C5 is typically the surface-mount DPAK (TO-252) version. Die characteristics — 650 V Vr, 2 A Io, 0 ns trr, 1.7 V Vf — are identical; the package difference determines the mounting and thermal interface.

What is the closest pin-compatible alternative to IDH02G65C5XKSA2?

Within the same CoolSiC™+ family, the IDH02G65C5 (DPAK) uses the same die but a different footprint. For a through-hole TO-220-2 alternative, the IDH02G65C5XKSA2 is the current offering; no direct second-source TO-220-2 SiC Schottky at 650 V / 2 A is cross-referenced in Infineon's documentation.