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IDH02G65C5XKSA2

Infineon IDH02G65C5XKSA2 SiC Schottky Diode

MPNIDH02G65C5XKSA2
End of Life

Infineon CoolSiC™+ IDH02G65C5XKSA2, Silicon Carbide Schottky Diode, 650 V Vr, 2 A Io, 0 ns trr, -55 to 175 °C junction temp, PG-TO220-2 through-hole package.

$1.87Ref. price · indicative, final on quote
Infineon Technologies IDH02G65C5XKSA2 datasheet (PDF)
PackagingTO-220-2
RoHSROHS3 Compliant
SeriesCoolSiC™+
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDH02G65C5XKSA2 specifications
ParameterValue
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 2 A
Current - average rectified2A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,70pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

What this SiC Schottky brings to the power stage

Its defining characteristic is zero reverse-recovery time (0 ns trr), which means no recovery charge tail to manage — the diode switches off the instant current crosses zero. That eliminates the switching loss and EMI spike that a silicon ultrafast diode would leave in a hard-switched PFC boost or LLC resonant stage. Junction temperature range of -55 to 175 °C covers industrial and automotive hot-spot environments without derating the 2 A average current. The 1.7 V forward drop at 2 A is typical for a 650 V SiC Schottky at this current class; conduction loss stays predictable across the full temperature range.

The 0 ns trr eliminates the recovery tail that dominates switching loss in a silicon ultrafast diode.

Infineon continues to manufacture the CoolSiC™+ generation; no PCN or last-time-buy has been issued for this order code. ROHS3 compliance is confirmed.

Frequently asked questions

What is the difference between IDH02G65C5XKSA2 and IDH02G65C5?

The IDH02G65C5XKSA2 is the PG-TO220-2 through-hole variant of the same CoolSiC™+ die. The IDH02G65C5 is typically the surface-mount DPAK (TO-252) version. Die characteristics — 650 V Vr, 2 A Io, 0 ns trr, 1.7 V Vf — are identical; the package difference determines the mounting and thermal interface.

What is the closest pin-compatible alternative to IDH02G65C5XKSA2?

Within the same CoolSiC™+ family, the IDH02G65C5 (DPAK) uses the same die but a different footprint. For a through-hole TO-220-2 alternative, the IDH02G65C5XKSA2 is the current offering; no direct second-source TO-220-2 SiC Schottky at 650 V / 2 A is cross-referenced in Infineon's documentation.