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Infineon Technologies IDFW80C65D1XKSA1

IDFW80C65D1XKSA1 CoolSiC Diode, 650 V, 74 A, TO-247-3

MPNIDFW80C65D1XKSA1
End of Life

Infineon CoolSiC™ Automotive series, IDFW80C65D1XKSA1, standard diode, 650 V reverse, 74 A average, 73 ns trr, TO-247-3, through-hole, -40 to 175 °C junction.

$7.4Ref. price · indicative, final on quote
Infineon Technologies IDFW80C65D1XKSA1 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q100/101, CoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDFW80C65D1XKSA1 specifications
ParameterValue
SeriesAutomotive, AEC-Q100/101, CoolSiC™
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 40 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified74A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-247-3
Reverse recovery time73 ns

Product details

650 V, 74 A CoolSiC diode for automotive traction

The 40 µA reverse leakage at 650 V (25 °C) climbs with junction temperature — the 175 °C ceiling is the practical limit for leakage-driven thermal runaway in a hard-switched topology.

Housed in a TO-247-3 through-hole package (PG-TO247-3-AI), the part suits high-current power stages where a solder-joint or press-fit connection to a metal-core PCB or busbar is preferred over surface-mount. The three-lead format keeps the cathode tab area large for heat sinking through the mounting hole.

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