650 V, 74 A CoolSiC diode for automotive traction
The Infineon IDFW80C65D1XKSA1 is a 650 V, 74 A standard recovery silicon carbide diode from the CoolSiC™ Automotive series. Its 73 ns reverse recovery time (trr) and 1.7 V forward drop at 40 A make it a fit for hard-switched DC-DC converters and traction inverter freewheeling paths where SiC's low switching loss shrinks the heatsink.
Junction temperature and thermal budget
The 40 µA reverse leakage at 650 V (25 °C) climbs with junction temperature — the 175 °C ceiling is the practical limit for leakage-driven thermal runaway in a hard-switched topology.
Package and mounting
Housed in a TO-247-3 through-hole package (PG-TO247-3-AI), the part suits high-current power stages where a solder-joint or press-fit connection to a metal-core PCB or busbar is preferred over surface-mount. The three-lead format keeps the cathode tab area large for heat sinking through the mounting hole.
