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Infineon Technologies IDDD12G65C6XTMA1

Infineon IDDD12G65C6XTMA1 SiC Schottky Diode, 650V 34A

MPNIDDD12G65C6XTMA1
End of Life

Infineon CoolSiC™+ series, Silicon Carbide Schottky Diode, 650 V DC reverse voltage, 34 A average rectified current, 0 ns reverse recovery time, Surface Mount, 10-PowerSOP Module (PG-HDSOP-10-1), -55°C ~ 175°C junction temperature.

$6.08Ref. price · indicative, final on quote
Infineon Technologies IDDD12G65C6XTMA1 datasheet (PDF)
Packaging10-PowerSOP Module
RoHSROHS3 Compliant
SeriesCoolSiC™+
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDDD12G65C6XTMA1 specifications
ParameterValue
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Current - reverse leakage @ vr40 µA @ 420 V
Current - average rectified34A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case10-PowerSOP Module
Capacitance @ vr,594pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

What the zero reverse recovery time means for the switching stage

The Infineon IDDD12G65C6XTMA1 is a CoolSiC™+ Silicon Carbide Schottky diode rated for 650 V reverse voltage and 34 A average rectified current. In a hard-switched PFC boost or inverter leg, that eliminates the reverse-recovery loss spike that a silicon ultrafast diode would generate, which directly reduces the switching loss in the companion MOSFET or IGBT and lowers the overall junction temperature in the power stage.

Package and mounting — what fits the board

The part is supplied in a 10-PowerSOP Module (PG-HDSOP-10-1), a surface-mount package designed for automated assembly. The 594 pF capacitance at 1 V, 1 MHz is the small-signal value; in a switching application the effective output capacitance is lower under reverse bias, so the driver sees a manageable capacitive turn-on current.

Infineon lists the IDDD12G65C6XTMA1 as an active product with ROHS3 compliance.

Frequently asked questions

What is the reverse recovery time of IDDD12G65C6XTMA1?

The reverse recovery time (trr) is 0 ns. As a Silicon Carbide Schottky diode, it has no stored minority charge, so there is no reverse-recovery current spike — the diode turns off instantly when the voltage reverses.

Is IDDD12G65C6XTMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What package does IDDD12G65C6XTMA1 use?

It comes in a 10-PowerSOP Module, specifically the PG-HDSOP-10-1 package, which is a surface-mount footprint.

What is the closest pin-compatible alternative to IDDD12G65C6XTMA1?

No pin-compatible equivalent is listed in the available records. The CoolSiC™+ family includes other current and voltage ratings in the same PG-HDSOP-10-1 package, but a direct drop-in replacement would need to match the 650 V / 34 A rating and the same footprint. Verify with Infineon's cross-reference tool or consult the distributor for a validated second source.