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Infineon Technologies IDDD08G65C6XTMA1

IDDD08G65C6XTMA1 CoolSiC™+ SiC Schottky Diode, 650V 24A

MPNIDDD08G65C6XTMA1
End of Life

Infineon CoolSiC™+ IDDD08G65C6XTMA1 Silicon Carbide Schottky Diode, 650 V reverse voltage, 24 A average rectified current, zero reverse recovery time, -55°C to 175°C junction temperature, PG-HDSOP-10-1 surface-mount package.

$3.5Ref. price · indicative, final on quote
Infineon Technologies IDDD08G65C6XTMA1 datasheet (PDF)
Packaging10-PowerSOP Module
RoHSROHS3 Compliant
SeriesCoolSiC™+
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDDD08G65C6XTMA1 specifications
ParameterValue
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Current - reverse leakage @ vr27 µA @ 420 V
Current - average rectified24A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case10-PowerSOP Module
Capacitance @ vr,401pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

SiC Schottky with zero recovery — what that means on the board

The Infineon IDDD08G65C6XTMA1 is a CoolSiC™+ Silicon Carbide Schottky diode rated for 650 V reverse voltage and 24 A average forward current, housed in a PG-HDSOP-10-1 surface-mount PowerSOP module.

The PG-HDSOP-10-1 is a surface-mount PowerSOP module with an exposed thermal pad. The supplier device package code is PG-HDSOP-10-1. Board layout must match the recommended footprint for the thermal pad — standard reflow process, no through-hole.

RoHS3 compliant, which covers the EU RoHS directive. No other compliance certifications are on record for this listing.