IDD08SG60CXTMA2

Infineon Technologies · CoolSiC™+ Series

Infineon CoolSiC™+ IDD08SG60CXTMA2, SiC (Silicon Carbide) Schottky Diode, 600 V reverse voltage, 8 A average rectified current, 0 ns reverse recovery time, -55°C to 175°C junction temperature, PG-TO252-3 surface-mount package.

Infineon Technologies IDD08SG60CXTMA2
[IN STOCK] In Stock: 10 pcs
$4.76/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IDD08SG60CXTMA2 specifications
Parameter / AttributeSpecification / Value
SeriesCoolSiC™+
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.1 V @ 8 A
Current - reverse leakage @ vr70 µA @ 600 V
Current - average rectified8A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Capacitance @ vr,240pF @ 1V, 1MHz
Reverse recovery time0 ns

Technical details

Zero-recovery SiC Schottky for hard-switched power stages

Its zero reverse recovery time (0 ns trr) eliminates the switching-loss component in hard-switched topologies — boost PFC, LLC converters, and motor-drive rectifiers — where a silicon fast-recovery diode would burn tens of watts in reverse recovery charge.

Conduction loss and thermal budget at 8 A

At the rated 8 A forward current the maximum forward voltage is 2.1 V, which gives a conduction loss ceiling of 16.8 W. The 70 µA reverse leakage at 600 V is typical for a 600 V SiC Schottky and contributes negligible off-state loss.

Package and footprint — TO-252 (DPak)

The PG-TO252-3 package (DPak, 2 leads plus tab) is a standard surface-mount power package. The tab is the cathode terminal and carries the bulk of the thermal path. The land pattern matches industry-standard TO-252 footprints — no special pad geometry required.

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