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Infineon Technologies IDD08SG60CXTMA2

IDD08SG60CXTMA2 CoolSiC™+ SiC Schottky Diode, 600V 8A

MPNIDD08SG60CXTMA2
End of Life

Infineon CoolSiC™+ IDD08SG60CXTMA2, SiC (Silicon Carbide) Schottky Diode, 600 V reverse voltage, 8 A average rectified current, 0 ns reverse recovery time, -55°C to 175°C junction temperature, PG-TO252-3 surface-mount package.

$4.85Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDD08SG60CXTMA2 Technical Specifications
ParameterValue
SeriesCoolSiC™+
Mounting typeSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.1 V @ 8 A
Current - reverse leakage @ vr70 µA @ 600 V
Current - average rectified8A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Capacitance @ vr, f240pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

Zero-recovery SiC Schottky for hard-switched power stages

Its zero reverse recovery time (0 ns trr) eliminates the switching-loss component in hard-switched topologies — boost PFC, LLC converters, and motor-drive rectifiers — where a silicon fast-recovery diode would burn tens of watts in reverse recovery charge.

Conduction loss and thermal budget at 8 A

At the rated 8 A forward current the maximum forward voltage is 2.1 V, which gives a conduction loss ceiling of 16.8 W. The TO-252 package's exposed metal tab must be soldered to a sufficient copper area on the PCB to keep the junction below 175 °C — the rated maximum junction temperature. The 70 µA reverse leakage at 600 V is typical for a 600 V SiC Schottky and contributes negligible off-state loss.

Package and footprint — TO-252 (DPak)

The PG-TO252-3 package (DPak, 2 leads plus tab) is a standard surface-mount power package. The tab is the cathode terminal and carries the bulk of the thermal path. The land pattern matches industry-standard TO-252 footprints — no special pad geometry required.

Frequently asked questions

What package does IDD08SG60CXTMA2 use?

It uses the PG-TO252-3 package, which is a standard TO-252 (DPak) surface-mount package with two leads and a metal tab.

What is the reverse recovery time of IDD08SG60CXTMA2?

The reverse recovery time is 0 ns — a SiC Schottky diode has no stored charge, so it exhibits zero reverse recovery current and no associated switching loss.

Is IDD08SG60CXTMA2 RoHS compliant?

Yes, it is ROHS3 compliant.