Zero-recovery SiC Schottky — what the trr = 0 ns means for the switching stage
The IDD06SG60CXTMA2 is a 600 V, 6 A silicon carbide Schottky diode from Infineon's CoolSiC+ family. Its defining spec is zero reverse recovery time — the trr is listed as 0 ns, and the diode exhibits no recovery charge at any forward current or di/dt. That eliminates the turn-on loss spike a fast Si diode dumps into the FET every cycle.
600 V / 6 A envelope — where this part fits on the BOM
Rated 600 V reverse and 6 A average forward current, the IDD06SG60CXTMA2 is sized for the boost diode in a continuous-conduction-mode PFC stage up to about 500 W, or the secondary-side rectifier in a 200-300 W LLC converter. The forward drop is 2.3 V max at 6 A, typical for a 600 V SiC Schottky of this current class — conduction loss is higher than a comparable Si hyperfast diode, but the switching-loss elimination more than makes up for it above 50 kHz.
175 °C junction — thermal headroom for tight enclosures
That extra margin matters when the diode shares a heatsink with a hot MOSFET in a sealed power supply or a motor-drive PFC stage where ambient inside the enclosure hits 85-100 °C. Reverse leakage at 600 V is 50 µA — low enough that self-heating at high line is negligible.
Package and footprint — the cathode tab is live
Supplied in a TO-252-3 (DPak) surface-mount package, supplier device code PG-TO252-3. The exposed tab is the cathode — the PCB copper area under it must be connected to the output rail, not ground. The 130 pF capacitance at 1 V reverse is low enough that the diode does not add noticeable ringing in a hard-switched half-bridge.
Lifecycle and compliance — no LTB risk, RoHS3
No official second-source or pin-compatible alternate is listed — this is a proprietary Infineon SiC die in a standard DPak footprint.