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Infineon Technologies IAUZ40N08S5N100ATMA1
Infineon Technologies

Infineon IAUZ40N08S5N100ATMA1 N-Channel MOSFET, 80 V

MPNIAUZ40N08S5N100ATMA1
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Infineon OptiMOS™-5 N-channel MOSFET, IAUZ40N08S5N100ATMA1, 80 V Vdss, 40 A continuous drain, 10 mOhm Rds(on) max at 20 A, 10 V gate, PG-TDSON-8 package, AEC-Q101 qualified, -55 to 175°C junction temperature.

$1.34Ref. price · indicative, final on quote
IAUZ40N08S5N100ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IAUZ40N08S5N100ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 27µA
Rds on (Max) @ id, vgs10mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs24.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1591 pF @ 40 V

Product details

80 V N-channel power MOSFET with AEC-Q101 qualification

The Infineon IAUZ40N08S5N100ATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS™-5 series, built on a metal-oxide semiconductor technology. The junction temperature range is -55°C to 175°C, with AEC-Q101 qualification.

The 10 mOhm Rds(on) maximum at 20 A and 10 V is the conduction-loss floor for this part. Paired with a maximum gate charge of 24.2 nC at 10 V, the figure of merit (Rds(on) × Qg) is moderate — the part is optimised for hard-switched topologies like DC-DC converters and motor-drive bridges where conduction losses dominate at lower switching frequencies. Input capacitance Ciss is 1591 pF typical at 40 V Vds, which sets the switching energy per cycle. The drive voltage range specified for Rds(on) is 6 V to 10 V, allowing compatibility with both 5 V logic-level gate drivers and standard 10 V gate drives.

Frequently asked questions

Is IAUZ40N08S5N100ATMA1 AEC-Q101 qualified?

Yes, the IAUZ40N08S5N100ATMA1 carries AEC-Q101 qualification, the automotive-grade discrete semiconductor standard. This means the part has passed the required reliability stress tests (HTRB, H3TRB, TC, etc.) and is supported by PPAP documentation suitable for submission to OEM auditors.