80 V N-channel power MOSFET with AEC-Q101 qualification
The Infineon IAUZ40N08S5N100ATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS™-5 series, built on a metal-oxide semiconductor technology. The junction temperature range is -55°C to 175°C, with AEC-Q101 qualification.
The 10 mOhm Rds(on) maximum at 20 A and 10 V is the conduction-loss floor for this part. Paired with a maximum gate charge of 24.2 nC at 10 V, the figure of merit (Rds(on) × Qg) is moderate — the part is optimised for hard-switched topologies like DC-DC converters and motor-drive bridges where conduction losses dominate at lower switching frequencies. Input capacitance Ciss is 1591 pF typical at 40 V Vds, which sets the switching energy per cycle. The drive voltage range specified for Rds(on) is 6 V to 10 V, allowing compatibility with both 5 V logic-level gate drivers and standard 10 V gate drives.