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Infineon Technologies IAUZ40N06S5L050ATMA1

IAUZ40N06S5L050ATMA1 Infineon OptiMOS-5 N-Ch 60V 90A MOSFET

MPNIAUZ40N06S5L050ATMA1
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Infineon OptiMOS™-5 IAUZ40N06S5L050ATMA1, N-Channel MOSFET, 60 V Vds, 90 A Id, 5 mOhm Rds(on) at 20 A, 10 V gate drive, AEC-Q101, PG-TSDSON-8-33 package, -55 to 175 °C.

$1.24Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IAUZ40N06S5L050ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C90A (Tj)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 29µA
Rds on (Max) @ id, vgs5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs36.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 30 V

Product details

5 mOhm at 20 A — the conduction-loss ceiling

The IAUZ40N06S5L050ATMA1: For a 20 A load, the dissipation at 5 mOhm is 2 W; at 100 °C junction the Rds(on) roughly doubles per the datasheet's normalized curve, so budget 4 W in a hot environment.

AEC-Q101 and the 175 °C junction ceiling

AEC-Q101 qualified — this part is released for automotive stress grades: under-hood, transmission control, and chassis-domain power stages. The junction temperature range extends to 175 °C, 25 °C above the typical 150 °C limit, which buys margin in engine-bay or exhaust-adjacent mounting where ambient air hits 125 °C. The PG-TSDSON-8-33 package has an exposed drain pad; the PCB copper area under that pad sets the RthJA, so the layout determines whether the 71 W power dissipation rating is reachable or thermally limited.

Gate charge and drive budget

Total gate charge is 36.7 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current is Qg × f = 3.67 mA — well within a standard gate-driver IC's output capability. The input capacitance Ciss is 2500 pF at 30 V Vds; this sets the switching loss during the Miller plateau.

Frequently asked questions

Is IAUZ40N06S5L050ATMA1 AEC-Q101 qualified?

Yes, it is AEC-Q101 qualified, which means it is released for automotive-grade applications including under-hood and chassis-domain power stages. The qualification covers the -55 °C to 175 °C junction temperature range.