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Infineon Technologies IAUT300N10S5N015ATMA1
Infineon Technologies

IAUT300N10S5N015ATMA1 OptiMOS™-5 N-Channel MOSFET, 100V 300A

MPNIAUT300N10S5N015ATMA1
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Infineon OptiMOS™-5 IAUT300N10S5N015ATMA1 N-channel MOSFET, 100 V Vdss, 300 A continuous drain, 1.5 mOhm Rds(on) at 10 V, 8-PowerSFN PG-HSOF-8-1 package, -55°C to 175°C junction temperature.

$5.55Ref. price · indicative, final on quote
IAUT300N10S5N015ATMA1 datasheet
Packaging8-PowerSFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IAUT300N10S5N015ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C300A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id3.8V @ 275µA
Rds on (Max) @ id, vgs1.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs216 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds16011 pF @ 50 V

Product details

100 V, 300 A — the power-stage workhorse

The Infineon IAUT300N10S5N015ATMA1 is an OptiMOS™-5 N-channel power MOSFET rated for 100 V drain-to-source voltage and 300 A continuous drain current. It delivers a maximum on-resistance of 1.5 mOhm at 100 A with a 10 V gate drive, placing it in the high-current, low-loss tier for synchronous rectification, motor-drive inverters, and battery isolation switches. The 8-PowerSFN (PG-HSOF-8-1) surface-mount package keeps the footprint compact, but the 375 W power dissipation figure means the board layout must sink serious heat — expect a large copper pour or an external heatsink on the drain tab.

What the ratings mean for the BOM

The 1.5 mOhm Rds(on) at 10 V gate drive is the efficiency anchor. The 216 nC gate charge at 10 V tells you the gate driver needs to source and sink a substantial pulse current.

Frequently asked questions

What is the replacement for IAUT300N10S5N015ATMA1?

No official replacement or successor is listed. The part is active, so no replacement is needed. If you are evaluating a second source, the IPD50R950CEAUMA1 is a different voltage class (500 V, 4.3 A, 950 mOhm) and is not a functional substitute — it serves a different application tier.