80 V, 1.1 mOhm — conduction loss floor for high-current switching
The 1.1 mOhm figure is the value the designer uses for worst-case dissipation at full load; actual Rds(on) rises with junction temperature per the normalised curve in the datasheet.
Gate charge and drive budget
Total gate charge Qg is 231 nC at 10 V. The 16250 pF input capacitance at 40 V drain-source confirms this is a large-die device — the driver output stage needs enough peak current to charge and discharge that capacitance within the dead-time budget. The recommended drive voltage range is 6 V to 10 V for achieving the rated Rds(on). Using 6 V gate drive increases on-resistance above the 1.1 mOhm figure; the 10 V drive is the standard for reaching the minimum Rds(on) stated in the datasheet.
The PG-HSOF-8-1 package (8-PowerSFN) is a surface-mount power package with an exposed drain pad on the bottom.
The ±20 V maximum gate-source voltage is standard for this voltage class and compatible with most gate drivers.