100 V, 260 A switching — the 1.9 mOhm floor
The IAUT260N10S5N019ATMA1: The drive voltage window (6 V to 10 V) means it can be driven from a 10 V rail for minimum Rds(on) or from a 6 V rail if the gate-driver supply is lower, though the 10 V figure is the one to design around for full performance.
Package and thermal — PG-HSOF-8-1
Housed in the 8-lead PowerSFN (PG-HSOF-8-1) surface-mount package, this part relies on the exposed pad for heat sinking. The 8-PowerSFN footprint is smaller than a D2PAK but demands a multi-layer board with adequate copper pour for 260 A continuous current; the PCB trace width and via count must be sized for the load, not just the package rating.
Gate charge and switching speed
Total gate charge (Qg) is 166 nC at 10 V, and input capacitance (Ciss) is 11830 pF at 50 V drain-source. These numbers tell the gate-driver designer how much current is needed to switch the FET at the target frequency: a 1 A gate driver can charge 166 nC in about 166 ns, but the Miller plateau and the 11830 pF Ciss will shape the actual rise/fall times. For a 100 kHz hard-switching converter, the gate-drive losses alone (Qg × Vgs × fsw) add up — budget around 0.17 W per FET at 100 kHz, which is manageable but not negligible.
Temperature grade and environment
The 175°C ceiling is above the typical 150°C limit for many 100 V MOSFETs, which makes this part suited for under-hood automotive, industrial motor drives with high ambient temperature, or any environment where junction temperature spikes during overload. The threshold voltage (Vgs(th)) is 3.8 V maximum at 210 µA drain current, so the gate drive must swing well above 3.8 V to fully enhance the channel — the 6 V minimum drive voltage in the spec is the practical floor.