100 V, 260 A switching — the 1.9 mOhm floor
The IAUT260N10S5N019ATMA1: The drive voltage window (6 V to 10 V) means it can be driven from a 10 V rail for minimum Rds(on) or from a 6 V rail if the gate-driver supply is lower, though the 10 V figure is the one to design around for full performance.
Package and thermal — PG-HSOF-8-1
Housed in the 8-lead PowerSFN (PG-HSOF-8-1) surface-mount package, this part relies on the exposed pad for heat sinking. The 8-PowerSFN footprint is smaller than a D2PAK but demands a multi-layer board with adequate copper pour for 260 A continuous current; the PCB trace width and via count must be sized for the load, not just the package rating.
These numbers tell the gate-driver designer how much current is needed to switch the FET at the target frequency: a 1 A gate driver can charge 166 nC in about 166 ns, but the Miller plateau and the 11830 pF Ciss will shape the actual rise/fall times. For a 100 kHz hard-switching converter, the gate-drive losses alone (Qg × Vgs × fsw) add up — budget around 0.17 W per FET at 100 kHz, which is manageable but not negligible.
The 175°C ceiling is above the typical 150°C limit for many 100 V MOSFETs, which makes this part suited for under-hood automotive, industrial motor drives with high ambient temperature, or any environment where junction temperature spikes during overload. The threshold voltage (Vgs(th)) is 3.8 V maximum at 210 µA drain current, so the gate drive must swing well above 3.8 V to fully enhance the channel — the 6 V minimum drive voltage in the spec is the practical floor.