Infineon OptiMOS™-5, IAUT200N08S5N023ATMA1, N-Channel MOSFET, 80 V drain-to-source, 200 A continuous drain, 2.3 mOhm Rds(on) at 10 V, 110 nC gate charge, -55°C to 175°C junction temperature, PG-HSOF-8-1 surface-mount package.
| Parameter | Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 3.8V @ 130µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7670 pF @ 40 V |
The 110 nC gate charge at 10 V sets the switching energy budget; paired with a gate driver rated for 6 V to 10 V drive voltage, the part can switch efficiently at moderate frequencies. Input capacitance is 7670 pF at 40 V Vds, which influences the gate-drive current required for fast transitions.
It is ROHS3 compliant, meeting current EU restriction-of-hazardous-substances requirements.
Yes, it is rated ROHS3 compliant, meaning it meets the latest EU RoHS directive without exemptions.
The peer part IPD50R950CEAUMA1 is a CoolMOS™ CE N-channel MOSFET, but it operates at 500 V with a 950 mOhm Rds(on) and 4.3 A current rating — a completely different voltage and current class. It is not a functional substitute for the 80 V, 200 A OptiMOS™-5 part. No pin-compatible second source is listed in the official records.