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Infineon Technologies IAUT200N08S5N023ATMA1
Infineon Technologies

Infineon IAUT200N08S5N023ATMA1 N-Channel MOSFET, 80 V 200 A

MPNIAUT200N08S5N023ATMA1
End of Life

Infineon OptiMOS™-5, IAUT200N08S5N023ATMA1, N-Channel MOSFET, 80 V drain-to-source, 200 A continuous drain, 2.3 mOhm Rds(on) at 10 V, 110 nC gate charge, -55°C to 175°C junction temperature, PG-HSOF-8-1 surface-mount package.

$3.33Ref. price · indicative, final on quote
IAUT200N08S5N023ATMA1 datasheet
Packaging8-PowerSFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IAUT200N08S5N023ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C200A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id3.8V @ 130µA
Rds on (Max) @ id, vgs2.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7670 pF @ 40 V

Product details

Conduction and switching performance

The 2.3 mOhm Rds(on) at 10 V (measured at 100 A) keeps conduction losses low in high-current paths such as motor drives, DC-DC converters, and battery management systems. The 110 nC gate charge at 10 V sets the switching energy budget; paired with a gate driver rated for 6 V to 10 V drive voltage, the part can switch efficiently at moderate frequencies. Input capacitance is 7670 pF at 40 V Vds, which influences the gate-drive current required for fast transitions.

Lifecycle and compliance

The IAUT200N08S5N023ATMA1 carries an Active lifecycle status from Infineon, so it is available for new designs and ongoing production without last-time-buy risk. It is ROHS3 compliant, meeting current EU restriction-of-hazardous-substances requirements. No second-source or direct replacement is listed in the official records; the part is sole-sourced to Infineon's OptiMOS™-5 line.

Frequently asked questions

Is IAUT200N08S5N023ATMA1 RoHS compliant?

Yes, it is rated ROHS3 compliant, meaning it meets the latest EU RoHS directive without exemptions.

What is the closest functional second-source for IAUT200N08S5N023ATMA1?

The peer part IPD50R950CEAUMA1 is a CoolMOS™ CE N-channel MOSFET, but it operates at 500 V with a 950 mOhm Rds(on) and 4.3 A current rating — a completely different voltage and current class. It is not a functional substitute for the 80 V, 200 A OptiMOS™-5 part. No pin-compatible second source is listed in the official records.