The IAUT150N10S5N035ATMA1: The 87 nC total gate charge at 10 V and 3.5 mOhm on-resistance at 75 A, 10 V are specified in the datasheet. The 166 W power dissipation rating at the case is listed. The 6110 pF input capacitance at 50 V Vds sets the switching energy per cycle; expect a turn-on/turn-off delay in the tens of nanoseconds with a 10 Ω gate resistor, but the exact edge rate depends on the driver's source/sink capability.

IAUT150N10S5N035ATMA1 OptiMOS-5 N-Ch 100V 150A MOSFET
MPNIAUT150N10S5N035ATMA1
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Infineon OptiMOS™-5 N-Channel MOSFET, IAUT150N10S5N035ATMA1, 100V Vdss, 150A Id, 3.5mOhm Rds(on) @ 75A, 10V, PG-HSOF-8-1 package, -55 to 175°C.
$3.2Ref. price · indicative, final on quote
Packaging8-PowerSFN
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Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 150A (Tc) |
| Power dissipation | 166W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 3.8V @ 110µA |
| Rds on (Max) @ id, vgs | 3.5mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6110 pF @ 50 V |
Product details
Frequently asked questions
What is the Rds(on) of IAUT150N10S5N035ATMA1?
The drive voltage range for achieving minimum Rds(on) is 6 V to 10 V.
Can IAUT150N10S5N035ATMA1 be used in high-power 100 V switching applications?
Yes — the 100 V drain-source rating, 150 A continuous current, and 3.5 mOhm Rds(on) make it suitable for high-current switching regulators, motor-drive half-bridges, and power-supply output stages. The 175 °C junction temperature rating supports the thermal demands of such applications.