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Infineon Technologies IAUS300N08S5N012ATMA1

IAUS300N08S5N012ATMA1 MOSFET N-CH 80V 300A, AEC-Q101

MPNIAUS300N08S5N012ATMA1
End of Life

Infineon OptiMOS™ IAUS300N08S5N012ATMA1, N-channel MOSFET, 80 V drain-to-source, 300 A continuous drain, 1.2 mOhm Rds(on) at 10 V, AEC-Q101 qualified, PG-HSOG-8-1 package.

$6.14Ref. price · indicative, final on quote
Infineon Technologies IAUS300N08S5N012ATMA1 datasheet (PDF)
Packaging8-PowerSMD, Gull Wing
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IAUS300N08S5N012ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C300A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerSMD, Gull Wing
Vgs(th) (Max) @ id3.8V @ 275µA
Rds on (Max) @ id, vgs1.2mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs231 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds16250 pF @ 40 V

Product details

Gate drive and switching considerations

Gate charge is 231 nC at 10 V. The recommended drive voltage range is 6 V to 10 V for achieving the specified Rds(on). Maximum gate-to-source voltage is ±20 V.

Package and thermal path

The PG-HSOG-8-1 package is an 8-lead PowerSMD with gull-wing leads and an exposed drain pad on the bottom.

Automotive qualification and production status

ROHS3 compliance is listed, covering the latest restriction exemptions. For a BOM freeze or a new design, this part is a safe choice for automotive power stages.

Frequently asked questions

Is IAUS300N08S5N012ATMA1 AEC-Q101 qualified?

Yes, the IAUS300N08S5N012ATMA1 is AEC-Q101 qualified, which is the automotive-grade reliability standard for discrete semiconductors. This qualification covers the stress tests needed for under-hood and chassis-domain applications.

What are the equivalents or alternatives for IAUS300N08S5N012ATMA1?

The IPD50R950CEAUMA1 is a different-class device (500 V, 950 mOhm, CoolMOS™ CE) and is not a functional equivalent for the 80 V, 1.2 mOhm IAUS300N08S5N012ATMA1. For a true alternative, look for other AEC-Q101 N-channel MOSFETs in the 80 V, sub-2 mOhm range in a similar PowerSMD package — Infineon's own OptiMOS™ 5 80 V portfolio offers several density options that share the same footprint.