Infineon Technologies IAUS200N08S5N023ATMA1
MPNIAUS200N08S5N023ATMA1
End of Life
MOSFET N-CH 80V 200A HSOG-8
$3.74Ref. price · indicative, final on quote
Packaging8-PowerSMD, Gull Wing
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, OptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSMD, Gull Wing |
| Vgs(th) (Max) @ id | 3.8V @ 130µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7670 pF @ 40 V |