Infineon OptiMOS™ IAUS165N08S5N029ATMA1, N-Channel MOSFET, 80 V Vdss, 165 A continuous drain, 2.9 mOhm Rds(on) at 80 A, 10 V, AEC-Q101, PG-HSOG-8-1 package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 165A (Tc) |
| Power dissipation | 167W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerSMD, Gull Wing |
| Vgs(th) (Max) @ id | 3.8V @ 108µA |
| Rds on (Max) @ id, vgs | 2.9mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 90 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6370 pF @ 40 V |
The IAUS165N08S5N029ATMA1: Total gate charge is 90 nC at 10 V, with an input capacitance of 6370 pF at 40 V drain-source. The drive voltage range spans 6 V to 10 V for achieving the rated Rds(on).
The PG-HSOG-8-1 package is an 8-lead PowerSMD with gull-wing leads, designed for surface-mount assembly.
Yes, the IAUS165N08S5N029ATMA1 is AEC-Q101 qualified, making it suitable for automotive applications that require stress screening and reliability testing per the AEC-Q101 standard.