Infineon OptiMOS™-5 N-Channel MOSFET, IAUC90N10S5N062ATMA1, 100V Vdss, 90A Id, 6.2mOhm Rds(on) at 10V, PG-TDSON-8-34 package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 115W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 59µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 45A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3275 pF @ 50 V |
The IAUC90N10S5N062ATMA1: Total gate charge is 36 nC at 10 V, with an input capacitance of 3275 pF at 50 V drain.
The 115 W power dissipation must be sunk through the PG-TDSON-8-34 package's exposed pad.
The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V.