IAUC60N06S5L073ATMA1

Infineon Technologies · OptiMOS™-5 Series

Infineon OptiMOS™-5 IAUC60N06S5L073ATMA1 N-Channel MOSFET, 60V Vdss, 60A Id, 7.3mOhm Rds(on) @ 30A 10V, AEC-Q101, PG-TDSON-8-33, -55°C to 175°C.

Infineon Technologies IAUC60N06S5L073ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IAUC60N06S5L073ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™-5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tj)
Power dissipation52W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 19µA
Rds on (Max) @ id, vgs7.3mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1655 pF @ 30 V

Technical details

With a maximum Rds(on) of 7.3 mOhm at 30 A and 10 V, conduction losses stay low even at high current. The gate charge is 22.6 nC at 10 V, which means the driver doesn't need to push a large charge into the gate for each switching cycle — a benefit for moderate-frequency PWM applications like motor drives or DC-DC converters. The drive voltage threshold is 2.2 V at 19 µA, so the part can be turned on with logic-level gate signals (4.5 V is the minimum recommended drive for the rated Rds(on)), but the 10 V drive delivers the lowest on-resistance.

Package and mounting — PG-TDSON-8-33

The supplier device package is PG-TDSON-8-33; the standard package / case is 8-PowerTDFN. Surface-mount assembly requires a solder paste stencil designed for the large thermal pad to ensure adequate solder joint coverage and heat transfer.

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