60V, 2.2 mOhm — the conduction-loss floor for a 170A-rated switch
The Infineon IAUC120N06S5L022ATMA1 is an OptiMOS™-5 N-channel power MOSFET rated for 60 V drain-source and a continuous drain current of 170 A at 25 °C junction.
Gate charge and switching speed
Total gate charge Qg is 77 nC at 10 V. Input capacitance Ciss is 5651 pF at 30 V drain bias.
175°C junction — rated for high-ambient power stages
The 136 W power dissipation at case temperature assumes a proper thermal interface to a heatsink or PCB copper plane.
Package and footprint: PG-TDSON-8-34
The 4.5 V and 10 V drive voltage ratings mean the part can be driven from a 5 V logic-level gate signal, though the lowest Rds(on) is specified at 10 V.
Lifecycle and sourcing
ROHS3 compliant.
