AEC-Q101 and 175°C junction — built for under-hood duty
The PG-TDSON-8-33 package (8-PowerTDFN) is a surface-mount footprint with a large exposed drain pad for heat sinking through the PCB.
IAUC120N04S6L008ATMA1 OptiMOS N-Ch 40V 120A MOSFET, 0.8mOhm
MPNIAUC120N04S6L008ATMA1
End of Life
Infineon OptiMOS™ IAUC120N04S6L008ATMA1, N-Channel MOSFET, 40V Vdss, 120A Id, 0.8mOhm Rds(on) at 60A, PG-TDSON-8-33, AEC-Q101, -55°C to 175°C.
$2.64Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 90µA |
| Rds on (Max) @ id, vgs | 0.8mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7910 pF @ 25 V |
Product details
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