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Infineon Technologies IAUC120N04S6L008ATMA1

IAUC120N04S6L008ATMA1 OptiMOS N-Ch 40V 120A MOSFET, 0.8mOhm

MPNIAUC120N04S6L008ATMA1
End of Life

Infineon OptiMOS™ IAUC120N04S6L008ATMA1, N-Channel MOSFET, 40V Vdss, 120A Id, 0.8mOhm Rds(on) at 60A, PG-TDSON-8-33, AEC-Q101, -55°C to 175°C.

$2.64Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IAUC120N04S6L008ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 90µA
Rds on (Max) @ id, vgs0.8mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7910 pF @ 25 V

Product details

AEC-Q101 and 175°C junction — built for under-hood duty

The PG-TDSON-8-33 package (8-PowerTDFN) is a surface-mount footprint with a large exposed drain pad for heat sinking through the PCB.

Gate charge and input capacitance — driver budget check

Total gate charge at 10 V is 140 nC, and input capacitance at 25 V drain is 7910 pF. For a 100 kHz switching frequency, the average gate-drive current needed is about 14 mA — well within the capability of a standard automotive gate-driver IC, but the peak current must be sized to charge the gate capacitance within the desired dead time.

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