The Infineon IAUA200N04S5N010AUMA1 is an automotive-grade N-channel MOSFET from the OptiMOS™-5 series, rated for 40 V drain-to-source voltage and 200 A continuous drain current. It is qualified to AEC-Q101, making it suitable for high-reliability automotive power-train, electric power steering, and DC-DC converter applications where junction temperatures can reach 175 °C.
1 mOhm Rds(on) — conduction loss in a 200 A path
The 1 mOhm maximum on-resistance at 100 A and 10 V gate drive keeps conduction losses under 20 W at full rated current. For a 200 A continuous load in a 40 V system, this translates to roughly 40 W of dissipation — within the 167 W package limit, but thermal management on the PG-HSOF-5-1 footprint still needs a low-thermal-resistance PCB layout and adequate copper area.
Gate charge and switching speed
Total gate charge is 132 nC at 10 V, with an input capacitance of 7650 pF at 25 V drain bias. The gate driver must supply a peak current capable of charging 132 nC within the desired switching interval.
Package and mounting
The part comes in a 5-lead PowerSFN surface-mount package, supplier device code PG-HSOF-5-1. The exposed drain pad on the bottom requires a soldered thermal via array to the ground plane. Reflow profile follows standard lead-free (ROHS3) solder processes; the package is supplied in Tape & Reel or Cut Tape options for automated assembly.