Infineon OptiMOS™-5 N-Channel MOSFET, 40 V Vdss, 180 A continuous drain, 1.2 mOhm Rds(on) at 90 A, 10 V gate drive, PG-HSOF-5-1 surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 7V, 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 5-PowerSFN |
| Vgs(th) (Max) @ id | 3.4V @ 70µA |
| Rds on (Max) @ id, vgs | 1.2mOhm @ 90A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6158 pF @ 25 V |
The IAUA180N04S5N012AUMA1 total gate charge is 100 nC at 10 V gate-source voltage. Input capacitance Ciss is 6158 pF at 25 V drain-source.
The 125 W power dissipation at case temperature gives the thermal designer a budget to work with when sizing the heatsink or PCB copper area.
This is specified at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.