FM25VN10-G

Infineon Technologies · F-RAM™ Series

Infineon F-RAM™ series, FM25VN10-G, 1 Mbit FRAM, SPI interface, 40 MHz clock, 8-SOIC narrow package, 2V-3.6V supply, -40°C to +85°C.

Infineon Technologies FM25VN10-G
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Technical specifications

FM25VN10-G specifications
Parameter / AttributeSpecification / Value
SeriesF-RAM™
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2V ~ 3.6V
Clock frequency40 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologyFRAM (Ferroelectric RAM)
Memory size1Mbit
Memory formatFRAM
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization128K x 8

Technical details

1 Mbit SPI FRAM — endurance and speed for data-logging firmware

The FM25VN10-G is a 1 Mbit ferroelectric RAM (FRAM) from Infineon's F-RAM series, organized as 128K x 8 bits and accessed over an SPI bus at up to 40 MHz. FRAM combines the non-volatility of EEPROM with the write speed and endurance of SRAM — no page-erase cycle, no wear-leveling needed. For a data logger writing a 64-byte record every second, the 10^14 read/write cycle endurance means the memory outlives the product's power supply.

Supply flexibility and industrial temperature grade

Packaged in an 8-pin narrow SOIC (3.90 mm body width), the FM25VN10-G uses the same footprint as standard SPI serial EEPROMs and NOR flash in the 8-SOIC package — a drop-in replacement on boards already laid out for those parts, provided the supply voltage and interface timing are compatible.

FM25VN10-G
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