SPI FRAM at 40 MHz — 1 Mbit non-volatile with no write-cycle penalty
The FM25V10-PG is a 1 Mbit ferroelectric RAM (FRAM) from Infineon's F-RAM series, organised as 128 K × 8 bits and accessed over an SPI bus at up to 40 MHz. Unlike EEPROM or NOR flash, FRAM writes at bus speed with no erase-before-write or page-buffer delay — each byte is written in a single SPI cycle, and endurance is effectively unlimited for field-data logging.
Industrial temperature grade in a through-hole DIP
The 8-pin PDIP package (0.300" body, 7.62 mm row spacing) is through-hole — hand-solderable, socket-friendly, and easier to rework than a surface-mount part in a prototype or low-volume build. The SPI interface operates at 40 MHz across the full voltage range, so the read/write throughput is consistent regardless of the chosen rail.
What FRAM means for the BOM
FRAM writes at bus speed with no write-cycle overhead — a key advantage over serial EEPROM or NOR flash when the system logs data frequently or needs to store updated parameters without a page-erase sequence. The SPI interface at 40 MHz delivers a sustained write throughput of 5 Mbytes/s, limited only by the bus clock, not the memory array.