FM25L16B-DG

Infineon Technologies

Cypress F-RAM™ FM25L16B-DG, 16Kbit non-volatile FRAM organized 2K x 8, 20 MHz SPI, 2.7V-3.6V supply, -40°C to 85°C, 8-DFN exposed pad surface-mount package.

Infineon Technologies FM25L16B-DG
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Technical specifications

FM25L16B-DG specifications
Parameter / AttributeSpecification / Value
SeriesF-RAM™
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency20 MHz
Memory interfaceSPI
Operating temperature-40°C~85°C(TA)
PackageTube
TechnologyFRAM (Ferroelectric RAM)
Memory size16Kbit
Memory formatFRAM
Case8-WDFN Exposed Pad
Memory organization2K x 8

Technical details

What this FRAM does on the board

The Cypress FM25L16B-DG is a 16Kbit Ferroelectric RAM (FRAM) non-volatile memory organized as 2K x 8, accessed through a 20 MHz SPI interface. The part comes in an 8-DFN exposed-pad surface-mount package (4x4.5 mm).

20 MHz SPI and no write delays

The 20 MHz SPI clock is the bus speed limit; FRAM writes complete in a single SPI cycle with no page-write or erase overhead. For a design that logs sensor data every 10 ms, this eliminates the 5 ms EEPROM page-write penalty that can stall the bus. The 2.7 V minimum supply means the part stays alive through a 3.3 V rail droop to 2.7 V, which is useful in battery-backed or capacitor-hold scenarios.

For dual-sourcing resilience, the FM25L16B-G is a pin-compatible sibling in a different package variant (SOIC-8); confirm the footprint before substituting.

FM25L16B-DG
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