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FM24W256-G

FM24W256-G Cypress FRAM, 256Kbit I2C, 550 ns access

MPNFM24W256-G
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Cypress F-RAM™ FM24W256-G, 256Kbit (32K x 8) non-volatile FRAM, I2C interface, 1 MHz clock, 550 ns access time, 2.7V-5.5V supply, -40°C to 85°C, 8-SOIC package, Tube.

$7.1900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

FM24W256-G specifications
ParameterValue
SeriesF-RAM™
Memory typeNon-Volatile
MountingSurface Mount
Voltage2.7V ~ 5.5V
Frequency1 MHz
Memory interfaceI²C
Operating temperature-40°C~85°C(TA)
PackageTube
TechnologyFRAM (Ferroelectric RAM)
Access time550 ns
Memory size256Kbit
Memory formatFRAM
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization32K x 8

Product details

550 ns access — no write delays, no wear-out

The Cypress FM24W256-G is a 256Kbit non-volatile FRAM (Ferroelectric RAM) in the F-RAM™ series, organized as 32K x 8 bits and accessed over an I2C bus at up to 1 MHz. Unlike EEPROM, FRAM writes at bus speed — the 550 ns access time applies to both reads and writes, with no write-cycle delay or page-buffer management. That makes it a drop-in replacement for serial EEPROM in applications that log data frequently or need deterministic write timing: metering, industrial event recording, and black-box storage.

The supply range spans 2.7V to 5.5V, so the same BOM line works on a 3.3V MCU or a 5V legacy bus without a level translator on the I2C lines. The I2C interface is fully specified across that range, and the 1 MHz clock rate holds at both supply corners. For a board that already runs mixed-voltage logic, this part simplifies the memory subsystem — no extra regulator, no pull-up voltage divider.

The 8-SOIC package (3.90 mm width) reflows cleanly on standard FR-4 and is hand-reworkable with hot air — the 150-mil body is easy to align and the pinout is clear enough to reflow back without lifting a pad.

Frequently asked questions

What is the write endurance of FM24W256-G?

FRAM technology offers essentially unlimited write endurance — 10^14 read/write cycles typical, compared to 1 million cycles for EEPROM. The FM24W256-G does not wear out from repeated writes, which is the main reason to choose it over I2C EEPROM for data-logging or counter applications.

Is FM24W256-G compatible with 3.3V logic?

Yes. The supply range of 2.7V to 5.5V includes 3.3V, and the I2C interface operates at 1 MHz across that range. No level translation is needed when connecting to a 3.3V MCU.

What is the difference between FRAM and EEPROM?

FRAM writes at bus speed with no write-cycle delay — the FM24W256-G's 550 ns access time applies to both reads and writes. EEPROM requires a 5 ms to 10 ms write cycle per page and has a wear limit of about 1 million writes. FRAM endurance is effectively unlimited (10^14 cycles), so it suits applications that write frequently, such as real-time data logging or energy-harvesting meters.