Infineon Technologies · F-RAM™ Series
Infineon F-RAM™ series, FM22L16-55-TG, 4Mbit Non-Volatile FRAM, Parallel interface, 110 ns access time, 256K x 16 organization, 2.7V–3.6V supply, -40°C to 85°C, 44-TSOP II surface-mount package.
MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | F-RAM™ |
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.7V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | FRAM (Ferroelectric RAM) |
| Access time | 110 ns |
| Memory size | 4Mbit |
| Memory format | FRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 110ns |
FRAM stores data without a battery — no coin cell, no supercapacitor, no battery holder on the BOM.
This part carries an Active lifecycle status and is ROHS3 compliant. No end-of-life notice or last-time-buy window has been announced.
