FRAM with 130 ns writes — no wear-out, no page-buffer management
The Cypress FM1808B-SGTR is a 256Kbit non-volatile FRAM (Ferroelectric RAM) organized as 32K x 8 bits, accessed through a standard parallel memory interface. Unlike serial FRAM or EEPROM, the parallel bus gives direct byte-level access without protocol overhead — useful for systems that already have a parallel memory controller or need to replace a battery-backed SRAM or EEPROM without redesigning the memory interface. The 130 ns write cycle time applies to both word and page operations, and because FRAM writes are not preceded by an erase cycle, there is no write-delay penalty or endurance limit in practice — rated for 10^14 read/write cycles, though the datasheet typical is effectively unlimited for most applications. This makes it a fit for frequent, high-speed data logging, parameter storage, or real-time state capture where Flash or EEPROM would wear out or impose write latencies.
5V supply rail — confirm your bus voltage
It will not work directly on a 3.3V bus without level translation on address, data, and control lines. If your design is 3.3V-only, the FM28V020-SG is a 2.0V–3.6V parallel FRAM alternative in the same 28-SOIC footprint — same 256Kbit density and 32K x 8 organization, with a 140 ns access time. The FM1808B-SGTR is the right choice when the system already has a 5V rail and you want to avoid the cost and board area of a voltage translator.