64Kbit parallel FRAM — bus timing and memory headroom
The FM16W08-SGTR is a 64Kbit non-volatile FRAM organized as 8K x 8, accessed through a parallel memory interface. The 130ns write cycle time means the host controller sees a single-cycle write — no erase-before-write penalty, no page-buffer latency. For a data logger recording 16-bit values at 1 kHz, the 64Kbit capacity holds roughly 4,000 samples before the firmware needs to manage the address pointer. The industrial temperature grade (-40°C to +85°C) covers factory-floor enclosures and outdoor telecom cabinets where the ambient sees seasonal extremes.
FRAM endurance — no wear-leveling, no battery
Ferroelectric RAM stores data in the crystal polarization state, not charge on a floating gate. This means writes are non-destructive and the endurance is effectively unlimited — 10^14 read/write cycles typical for the FRAM family, compared to 10^5 for EEPROM. No erase cycle, no write-buffer management, no battery backup for retention. The firmware writes directly to the address; the data persists across power cycles at the 130ns bus rate.
28-SOIC wide-body — board integration
No exposed thermal pad; the package dissipates through the leads and the copper pour under the body.