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Infineon Technologies FF50R12RT4HOSA1

Infineon FF50R12RT4HOSA1 IGBT Module, 1200V 50A Half Bridge

MPNFF50R12RT4HOSA1
End of Life

Infineon FF50R12RT4HOSA1 IGBT module, 1200V Vces, 50A Ic, half-bridge, Trench Field Stop technology, 285W power dissipation, chassis mount module, -40 to 150°C TJ, ROHS3 compliant.

$61.28Ref. price · indicative, final on quote
Infineon Technologies FF50R12RT4HOSA1 datasheet (PDF)
PackagingModule
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FF50R12RT4HOSA1 specifications
ParameterValue
IGBT typeTrench Field Stop
MountingChassis Mount
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)50 A
Current - collector cutoff1 mA
Power - max285 W
Operating temperature-40°C ~ 150°C (TJ)
InputStandard
PackageTray
ConfigurationHalf Bridge
NTC thermistorNo
CaseModule
Vce(on) (Max) @ vge, ic2.15V @ 15V, 50A
Input capacitance (Cies) @ vce2.8 nF @ 25 V

Product details

The Infineon FF50R12RT4HOSA1 is a 1200 V, 50 A IGBT module in a half-bridge configuration, built on Trench Field Stop technology. This part is designed for the inverter leg of motor drives, UPS systems, welding equipment, and renewable-energy inverters where a compact, high-reliability half-bridge switch is needed.

Vce(on) and input capacitance — switching and conduction trade-offs

Input capacitance Cies is 2.8 nF at 25 V Vce, a moderate value that keeps gate-driver power requirements manageable at switching frequencies typical for motor-drive and inverter applications. The collector cutoff current is specified at 1 mA maximum, indicating a clean off-state with low leakage at rated voltage.

The module is ROHS3 compliant.

Frequently asked questions

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What is the equivalent of FF50R12RT4HOSA1?

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What is the pinout of FF50R12RT4HOSA1?

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Where can I buy FF50R12RT4HOSA1?

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What is the difference between FF50R12RT4HOSA1 and FF50R12RT4?

Ensures the correct variant is selected, avoiding compatibility issues or unnecessary cost.