550 MHz DDR II+ SRAM — the bandwidth gate for your memory port
The Infineon CY7C2670KV18-550BZI is a 144 Mbit synchronous SRAM built on DDR II+ technology, organized as 4M x 36. The 550 MHz clock rate, combined with double-data-rate transfers on both edges, delivers a peak data rate that keeps a high-performance FPGA or network processor fed without wait states.
4M x 36 organization — wide-word depth for packet buffers and look-up tables
The 36-bit word width maps cleanly to a 32-bit data bus plus parity or ECC byte, or to a 36-bit wide datapath in a switch fabric. With 4M addresses, you can store a large forwarding table or a deep packet buffer without external muxing.
The 165-ball LBGA (15x17 mm) package is a fine-pitch BGA — plan for via-in-pad or microvia fanout, and keep the decoupling capacitors close to the supply balls.
Active lifecycle — no near-term EOL pressure
Infineon lists the CY7C2670KV18-550BZI as Active. The base product number is CY7C2670, which covers the family of density and speed variants — useful when searching for alternate speed grades or future cross-references.