550 MHz DDR II+ SRAM — 72 Mbit in a 2M x 36 organization
The CY7C25702KV18-550BZXC is a 72 Mbit synchronous SRAM from Infineon, organized as 2M words by 36 bits and clocked at 550 MHz. The DDR II+ interface transfers data on both clock edges, so the effective data rate per pin is 1100 MT/s — the 36-bit bus delivers a raw peak bandwidth of 39.6 Gbit/s. This is a memory for high-throughput applications like network packet buffers, telecom line cards, or high-end test equipment where the controller expects a QDR-style double-data-rate protocol.
Supply rails and temperature grade
Core supply is 1.7 V to 1.9 V — a tight 200 mV window that demands a clean rail; a low-noise LDO or a switching regulator with <10 mV ripple is the typical choice. That means this part is intended for controlled indoor environments, not industrial or automotive under-hood duty.