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Infineon Technologies CY7C2568XV18-600BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C2568XV18-600BZXC 72Mbit SRAM, 600 MHz, 165-FBGA

MPNCY7C2568XV18-600BZXC
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Infineon Technologies CY7C2568XV18-600BZXC, DDR II+ synchronous SRAM, 72Mbit, 4M x 18 organization, 600 MHz clock, 1.7V-1.9V supply, 165-FBGA (13x15 mm), Tray.

$401.7500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2568XV18-600BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency600 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

600 MHz DDR II+ SRAM — 72 Mbit in a 4M x 18 configuration

The CY7C2568XV18-600BZXC is a 72 Mbit synchronous SRAM from Infineon, organized as 4M words of 18 bits each. Its 600 MHz clock rate means data transfers on both clock edges (DDR II+), yielding an effective 1.2 Gbps per I/O pin — this is the bandwidth a high-end network switch or telecom line card needs for packet buffer lookups. The parallel memory interface connects directly to a controller without serialization latency.

Package and board-fit — 165-ball FBGA, 13 x 15 mm

Housed in a 165-ball FBGA (13 x 15 mm body), this is a fine-pitch BGA that demands controlled impedance routing and matched trace lengths for the 600 MHz DDR interface. Supplied in tray packaging, the parts arrive in antistatic trays ready for pick-and-place. The base product number CY7C2568 identifies the family; the suffix encodes the speed grade and temperature range.

Frequently asked questions

Where can I buy CY7C2568XV18-600BZXC and how do I get a price?

This part is sourced to order against an RFQ through independent and authorized distribution channels.

What does the DDR II+ technology mean for this SRAM?

DDR II+ is a double-data-rate synchronous SRAM architecture that transfers data on both the rising and falling edges of the 600 MHz clock. This gives an effective data rate of 1.2 Gbps per pin, which is why it is used in high-bandwidth applications like network buffers and cache memory.