Skip to main content
Infineon Technologies CY7C2568KV18-400BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2568KV18-400BZC Infineon 72Mbit SRAM, 400 MHz, FBGA

MPNCY7C2568KV18-400BZC
Obsolete

Infineon Technologies CY7C2568KV18-400BZC DDR II+ synchronous SRAM, 72Mbit, 4M x 18 organization, 400 MHz clock, parallel interface, 165-FBGA (13x15 mm), tray.

$283.4100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C2568KV18-400BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency400 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72Mbit DDR II+ SRAM at 400 MHz — last-time-buy reality

The CY7C2568KV18-400BZC is a 72Mbit synchronous SRAM built on a DDR II+ architecture — it transfers data on both rising and falling clock edges, doubling the throughput per clock cycle compared to a single-data-rate device. The 400 MHz clock rate delivers a peak data rate of 800 MT/s across the 18-bit-wide data bus, a fit for high-bandwidth buffer applications in networking line cards, test equipment, or FPGA-attached data paths that need deterministic read/write latency without DRAM refresh overhead. The memory is organized as 4M x 18 bits — the 18-bit word width maps cleanly to a 16-bit data bus with two parity/ECC bits or to an 18-bit raw-data path. The parallel interface connects directly to a memory controller without serialization latency, which is the reason this class of SRAM persists in designs where QDR or RLDRAM would add controller complexity.

Package and supply — board-fit constraints

The supplier device package is 165-FBGA (13x15) — the 13x15 mm footprint and ball map are the critical dimensions for the PCB layout; the stencil aperture and solder-paste volume for the centre thermal balls must follow the JEDEC design guide for this ball count. Supply voltage is 1.7 V to 1.9 V — a single core rail, but the 200 mV tolerance band means the regulator must hold regulation within ±5 % across load transients. A standard 1.8 V LDO with 1 % initial accuracy and 50 mV dropout at the SRAM's peak current (typically 400–500 mA for a 400 MHz DDR II+ part) keeps the rail inside the window.

Sourcing posture for an obsolete SRAM

Because the CY7C2568KV18-400BZC is officially obsolete, no authorized distributor holds factory stock. The part is sourced through independent channels that maintain surplus inventory from end-of-life buy lots or overstock. Each lot is verified for authenticity and traceability before shipment; the buyer receives a certificate of conformance with the order. A functional replacement would require a board spin — the 165-ball FBGA footprint and the DDR II+ timing parameters are specific to this die revision. The procurement desk should budget for a one-time BOM qualification if the existing design must be migrated to an active SRAM family.

Frequently asked questions

What is the memory organization and interface of CY7C2568KV18-400BZC?

The memory is organized as 4M x 18 bits (72 Mbit total) with a parallel interface. The DDR II+ architecture clocks at 400 MHz and transfers data on both edges, giving an 800 MT/s data rate on the 18-bit bus.