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Infineon Technologies CY7C25682KV18-400BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C25682KV18-400BZXC Infineon 72Mbit SRAM, 400 MHz

MPNCY7C25682KV18-400BZXC
Last Buy

Infineon Technologies CY7C25682KV18-400BZXC DDR II+ synchronous SRAM, 72 Mbit, 4M x 18 organization, 400 MHz clock, 1.7V–1.9V supply, 165-FBGA (13x15 mm), tray.

$77.6100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C25682KV18-400BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency400 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

Infineon has classified the CY7C25682KV18-400BZXC as Last Buy — the manufacturer is winding down production, and this is the final procurement opportunity before the part becomes unavailable through authorized channels. For a BOM that already carries this 72 Mbit DDR II+ SRAM, the decision is straightforward: secure the lifetime buy quantity now, or plan a board respin to a replacement memory device before the last-time-buy deadline passes.

400 MHz DDR II+ — the bandwidth story

At 400 MHz clock, this synchronous SRAM delivers double-data-rate transfers on every clock edge — the 4M x 18 organization means each access moves 18 bits per cycle, so the peak bandwidth is 400 MHz × 2 edges × 18 bits = 14.4 Gbit/s, or 1.8 GB/s. That bandwidth targets network switch buffers, telecom line cards, and high-end test equipment where the SRAM must keep pace with a 400 MHz ASIC or FPGA memory controller without wait states.

Package and supply — board-fit constraints

Commercial temperature grade (0°C to 70°C) limits this part to controlled indoor environments — a telecom cabinet with ambient above 55°C needs thermal simulation to confirm the junction stays within the 70°C ceiling.