72Mbit QDR II+ SRAM at 550 MHz — the bandwidth ceiling
The CY7C25652KV18-550BZXC is a 72Mbit synchronous SRAM built on Infineon's QDR II+ architecture, organized as 2M x 36. The 550 MHz clock rate delivers a peak data bandwidth that suits high-throughput applications like network line cards, telecom switches, and high-end test equipment where the memory bus is the bottleneck, not the core logic. QDR II+ (Quad Data Rate) means the device transfers two words per clock cycle on both the read and write ports independently — effectively four data transactions per clock. At 550 MHz, the raw interface bandwidth exceeds 39.6 Gbit/s, which is why this part lands in systems where the memory subsystem must keep pace with high-speed serial links or packet-processing pipelines.
Package and board-fit for the layout engineer
Housed in a 165-ball LBGA (13x15 mm FBGA footprint), the 0.80 mm ball pitch demands a multi-layer PCB with controlled impedance on the address and data traces. The supply range is 1.7V to 1.9V — a clean 1.8V rail with <5% ripple is the target; the core and I/O share the same supply domain, so decoupling strategy is straightforward: one 100 nF per four VDDQ balls plus a bulk 10 µF on the board side. It is not rated for extended industrial or automotive thermal profiles; if the enclosure sees >70°C, a wider-temp variant is needed.
Active lifecycle — no design-in risk
Infineon lists the CY7C25652KV18-550BZXC as Active (current production).