450 MHz QDR II+ SRAM for high-throughput data pipelines
The Infineon CY7C25652KV18-450BZXC is a 72Mbit synchronous SRAM built on QDR II+ architecture, organized as 2M x 36 and clocked at 450 MHz. This memory targets high-bandwidth applications like network switches, telecom line cards, and test equipment where the back-to-back read/write throughput of QDR II+ eliminates bus-turnaround dead cycles. The parallel memory interface keeps the data path wide — 36 bits per access — so a single device can sustain 1.8 GB/s of read and write bandwidth simultaneously.
The 165-LBGA designation is the same mechanical outline — the BGA array fans out on a 1.0 mm pitch, which routes cleanly on a 6-layer PCB without blind vias. Surface-mount assembly follows standard JEDEC MSL-3 floor life; a pre-reflow bake is required if the tray seal has been breached. The core and I/O share the same voltage domain — no separate VDDQ rail — which simplifies the PCB power plane split.
Active lifecycle and order placement
Sourced through authorized distribution and independent channels. The tray packaging ships in standard JEDEC trays of 136 pieces per tray — factor this into the pick-and-place feeder setup for volume runs.