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Infineon Technologies CY7C25652KV18-400BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C25652KV18-400BZXI QDR II+ SRAM, 72Mbit, 400 MHz

MPNCY7C25652KV18-400BZXI
End of Life

Infineon Technologies CY7C25652KV18-400BZXI, synchronous QDR II+ SRAM, 72 Mbit, 2M x 36 organization, 400 MHz clock, 1.7-1.9 V supply, -40°C to 85°C, 165-LBGA tray.

$196.7200Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C25652KV18-400BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency400 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72 Mbit QDR II+ SRAM at 400 MHz — what the clock buys you

The CY7C25652KV18-400BZXI is a 72 Mbit synchronous QDR II+ SRAM organized as 2M x 36. The 400 MHz clock rate means the memory delivers a peak data rate of 1.6 Gbps per I/O pin using the quad-data-rate architecture — two read and two write ports per clock cycle. This suits high-throughput applications like network packet buffers, line cards, and test equipment where the SRAM must keep up with the ASIC or FPGA without wait states.

Industrial temperature and supply tolerance

The 1.7 V to 1.9 V supply rail gives the board designer headroom: a 1.8 V nominal rail with ±5 % tolerance stays within the operating window, and the core logic is compatible with 1.8 V I/O standards common in high-performance FPGAs and network processors.

Supplied in a 165-ball LBGA (13x15 mm FBGA), the 1.0 mm ball pitch requires a standard 4-layer or 6-layer PCB with via-in-pad for the inner rows. The footprint is identical to other 165-ball QDR II+ SRAMs from Cypress/Infineon, so a single board layout can accommodate density upgrades without a respin. The tray packaging is typical for volume assembly — no reel, so plan for pick-and-place feeder changeover.

Frequently asked questions

What is the memory organization of CY7C25652KV18-400BZXI?

It is organized as 2M words by 36 bits, giving a total density of 72 Mbit. The 36-bit data bus is typically used with a 32-bit data word plus 4 bits for ECC or sideband control.

What voltage does CY7C25652KV18-400BZXI require?

The supply voltage range is 1.7 V to 1.9 V, making it a 1.8 V nominal device. The I/O interface is also 1.8 V HSTL-compatible.

Is CY7C25652KV18-400BZXI RoHS compliant?

The device is supplied in a RoHS-compliant tray package. Infineon provides full material declaration and RoHS/REACH certificates upon request.