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Infineon Technologies CY7C2563KV18-500BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2563KV18-500BZC QDR II+ SRAM, 72Mbit, 500 MHz, Infineon

MPNCY7C2563KV18-500BZC
Obsolete

Infineon Technologies QDR II+ SRAM, CY7C2563KV18-500BZC, 72Mbit, 500 MHz clock, 4M x 18 organization, 1.7V-1.9V supply, 165-FBGA (13x15), Tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C2563KV18-500BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency500 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72Mbit QDR II+ at 500 MHz — the throughput ceiling

The CY7C2563KV18-500BZC is a 72Mbit synchronous SRAM built on the QDR II+ architecture, clocked at 500 MHz. That clock rate sets the peak read/write bandwidth — at 500 MHz on a 18-bit data bus, the device delivers 9 Gbps per port in a two-port configuration. The 4M x 18 organization means the address space is 4 million words deep, each word 18 bits wide, which maps cleanly to a 36-bit datapath when paired with a second device for parity or ECC. The commercial temperature range (0°C to 70°C) limits this to indoor switching gear, not outdoor base stations or engine-bay controllers.

165-FBGA — rework and board-fit realities

The Tray packaging is the factory delivery format; reels are not available for this package variant, so pick-and-place feeders need a tray handler.

For existing BOM lines that require this exact part number, the supply channel is independent distribution and surplus inventory. Each lot is verified for authenticity and tested to the original datasheet limits before shipment.