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Infineon Technologies CY7C2563KV18-450BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C2563KV18-450BZXI 72Mbit QDR II+ SRAM, 450 MHz

MPNCY7C2563KV18-450BZXI
Obsolete

Infineon Technologies CY7C2563KV18-450BZXI synchronous QDR II+ SRAM, 72 Mbit, 4M x 18 organization, 450 MHz clock, 1.7V-1.9V supply, -40°C to 85°C, 165-FBGA (13x15 mm), Tray.

$352.0100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C2563KV18-450BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency450 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72 Mbit QDR II+ SRAM at 450 MHz — buffer or look-aside cache fit

The CY7C2563KV18-450BZXI is a 72 Mbit synchronous SRAM organized 4M x 18, clocked at 450 MHz, using the QDR II+ architecture. This density and speed target high-throughput applications like network packet buffers, test-equipment waveform memories, and FPGA look-aside caches where the read and write ports run independently on every clock edge.

Obsolete — sourcing through independent surplus channels

Infineon lists this part as Obsolete. The 165-ball FBGA (13x15 mm) ball-out is fixed; a board spin would be required to migrate to a different package or memory architecture.

1.8 V core rail and industrial temperature grade

The supply range is 1.7 V to 1.9 V — a single 1.8 V rail with ±0.1 V tolerance covers it, but the PCB must hold that rail tight under load transients.