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Infineon Technologies CY7C2562XV18-450BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C2562XV18-450BZXC QDR II+ SRAM, 72 Mbit, 450 MHz

MPNCY7C2562XV18-450BZXC
Last Buy

Infineon Technologies CY7C2562XV18-450BZXC QDR II+ SRAM, 72 Mbit (4M x 18), 450 MHz clock frequency, 1.7V-1.9V supply, 165-FBGA (13x15), Tray.

$211.0204Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C2562XV18-450BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency450 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

72 Mbit QDR II+ SRAM at 450 MHz — last-buy lifecycle

The CY7C2562XV18-450BZXC is a 72 Mbit synchronous SRAM organized as 4M x 18, using QDR II+ architecture for double-data-rate reads and writes on separate ports. The 450 MHz clock rate delivers a peak bandwidth of 900 MHz equivalent per port, making it suited for high-throughput networking buffers and test equipment that need deterministic latency and no refresh cycles. Infineon lists this part as Last Buy — the manufacturer has issued a last-time-buy notice, and future procurement will rely on the remaining factory allocation or surplus inventory.

The supply range is 1.7 V to 1.9 V, so the core rail must be regulated to 1.8 V ±0.1 V; a 1.8 V LDO with 200 mV dropout at the load current is the typical choice.

In the Last Buy window — quantities are limited to the manufacturer's final allocation and spot-market surplus. No pin-compatible direct replacement from Infineon is listed for this exact speed bin.