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Infineon Technologies CY7C25442KV18-333BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C25442KV18-333BZXI QDR II+ SRAM, 72Mbit, 333 MHz

MPNCY7C25442KV18-333BZXI
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Infineon CY7C25442KV18-333BZXI QDR II+ synchronous SRAM, 72Mbit, 2M x 36, 333 MHz, 1.7-1.9V, -40 to 85°C, 165-FBGA, Tray.

$283.3800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C25442KV18-333BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency333 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72 Mbit QDR II+ at 333 MHz — the throughput ceiling for packet buffers

The CY7C25442KV18-333BZXI is a 72 Mbit synchronous SRAM organized as 2M x 36, using the QDR II+ architecture — separate read and write ports, each running double-data-rate at the 333 MHz clock. That gives a peak bandwidth of 333 MHz × 36 bits × 2 (DDR) = roughly 3 GB/s on each port, or 6 GB/s aggregate. For a line card packet buffer or a network processor lookaside memory, that throughput keeps up with 100 GbE line-rate processing without the access-cycle penalties of a shared-bus SRAM. The board designer needs a clean 1.8V rail with ±100 mV tolerance and 1% regulation across load steps; a separate LDO per device is common in dense arrays.

Industrial temp and 165-ball FBGA — the fit for outdoor or vented enclosures

The parallel interface means every address and data line is a separate ball — no serialization. The pin count is high, but the trade-off is zero latency per access; the QDR II+ port independence avoids the turnaround cycles of a common I/O bus.