Active DDR II+ SRAM for wide-word memory buses
Infineon CY7C2270XV18-633BZXC is a 36 Mbit synchronous DDR II+ SRAM organized as 1M x 36 bits, clocked at 633 MHz. The double-data-rate architecture transfers data on both rising and falling clock edges, effectively doubling the throughput per pin compared to a single-data-rate part at the same clock frequency.
633 MHz clock and 1M x 36 organization — what they mean for fit
The 633 MHz clock rate sets the maximum interface speed. At DDR, the effective data rate is 1266 MT/s per I/O. The 36-bit-wide data bus delivers 5.7 GB/s peak bandwidth — enough to feed a high-performance network processor or FPGA without a narrower memory causing a bottleneck. Supply voltage range is 1.7 V to 1.9 V. This is a tight tolerance around a nominal 1.8 V rail. The PCB regulator must hold the output within 100 mV of 1.8 V under load transients; a standard 1.8 V LDO with 1% accuracy meets this, but a switching converter with >5% ripple will push the SRAM out of spec. This limits deployment to indoor, temperature-controlled environments. Not rated for industrial (-40°C to 85°C) or automotive use.
165-FBGA footprint and board integration
The 0.80 mm ball pitch is standard for this density; a 4-layer PCB with microvias under the BGA is sufficient for fan-out. The 1.7 V to 1.9 V core supply and the I/O supply share the same voltage domain, simplifying the power plane split. Supplied in Tray packaging. For volume production, request tape-and-reel from the factory lead — the Tray variant is typical for engineering samples and low-volume builds.